LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier NPN Transistor
L6&3838QT1
L2SC3838QT1
3
1
www.DataSheet4U.com
...
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
NPN Transistor
L6&3838QT1
L2SC3838QT1
3
1
www.DataSheet4U.com
2
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SC-59
3 COLLECTOR
Absolute maximum ratings (Ta=25 oC)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 20 11 3 50 0.2 150 - 55~+150 Unit V V V mA W
o o
1 BASE
2 EMITTER
C C
Device Marking
L2SC3838QT1=R25
Electrical characteristics (Ta=25 oC)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob rbb'·Cc NF Min. 20 11 3 120
Typ.
-
Max.
-
Unit V V V uA uA V GHz pF IC = 10 µA IC = 1mA IE = 10 µA VCB = 10V,IE=0 VEB = 2V,IC=0 IC/IB = 10mA/5mA VCE/IC = 10V/5mA
Conditions
0.5 0.5 0.5 270 1.5 12 -
1.4
-
3.2 0.8 4 3.5
VCB = 10V , IC = 10mA , f = 500MHz VCB = 10V , IE = 0A , f = 1MHz VCB = 10V , IC = 10mA , f = 31.8MHz VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω
ps
dB
L2SC3838QT1-1/2
LESHAN RADIO COMPANY, LTD.
L2SC3838QT1
SC-59
www.DataSheet4U.com
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