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MT6L77FS Dataheets PDF



Part Number MT6L77FS
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description VHF-UHF Band Low Noise Amplifier Application
Datasheet MT6L77FS DatasheetMT6L77FS Datasheet (PDF)

MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Two devices are built in to the fine pich small mold package (6pins):fs6 0.1±0.05 1.0±0.05 0.8±0.05 0.1±0.05 0.15±0.05 Unit: mm 0.35 0.35 1.0±0.05 0.7±0.05 • • It exsels in the buffer and oscillation use. Leed (Pb)-free 1 2 3 6 5 4 0.1±0.05 Mounted Devices www.DataSheet4U.com Q1 Three-pin fSM mold products are corresponded MT3S11FS Q2 MT3S106FS Maximu.

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MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Two devices are built in to the fine pich small mold package (6pins):fs6 0.1±0.05 1.0±0.05 0.8±0.05 0.1±0.05 0.15±0.05 Unit: mm 0.35 0.35 1.0±0.05 0.7±0.05 • • It exsels in the buffer and oscillation use. Leed (Pb)-free 1 2 3 6 5 4 0.1±0.05 Mounted Devices www.DataSheet4U.com Q1 Three-pin fSM mold products are corresponded MT3S11FS Q2 MT3S106FS Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current SYMBOL Q1 VCBO VCEO VEBO IC IB 13 6 1 40 10 100 110 (Note 2) Junction temperature Storage temperature range 2 0.48 -0.04 +0.02 RATING Q2 13 6 1 80 20 UNIT V V V mA mA 1.COLLECTOR 1 2.EMITTER1 3.COLLECTOR2 4.BASE2 5.EMITTER2 6.BASE1 fS6 JEDEC JEITA TOSHIBA •\ •\ 2-1F1A Weight : 0.001g (typ.) °C °C Tj Tstg 125 −55~125 Note 1 : 1.0 cm × 1.0 mm (t) at the time of glass epoxy printed circuit board mounting. Note 2 : At the time of two-element operation Marking (top view) 6 5 4 Pin Assignment (top view) B1 E2 B2 54 1 2 3 Q1 Q2 C1 E1 C2 1 2005-06-13 MT6L77FS ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure www.DataSheet4U.com SYMBOL ICBO IEBO hFE Cre (Note) fT S21e (1) 2 2 CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz MIN.   100  4  4  TYP.    0.65 6 3.5 6.5 2.4 MAX. 0.1 1 160 0.9    3.2 UNIT µA µA  pF GHz dB dB S21e (2) NF ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure SYMBOL ICBO IEBO hFE Cre (Note) fT S21e (1) 2 2 CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz MIN.   110  6.5  8.5  TYP.    0.5 8.5 8 10 1.2 MAX. 0.1 0.5 160 0.7    2 UNIT µA µA  pF GHz dB dB S21e (2) NF Note : Cre is measured by 3 terminal method capacitance bridge. Caution This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle. 2 2005-06-13 MT6L77FS www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE • • The information contained herein is subject to change without notice. 030619EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. TOSHIBA products should not be embedded to the downstream products.


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