MT6L63FS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L63FS
VHF~UHF Band Low-Noise Amplifier Applications
Tw...
MT6L63FS
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
MT6L63FS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05
Unit: mm
1.0±0.05
0.7±0.05
Superior noise characteristics Superior performance in buffer and oscillator applications Lead (Pb)-free.
1 2 3
6 5 4 0.1±0.05
Mounted Devices
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Q1 Corresponding three-pin products: TESM(fSM) mold products MT3S07T (MT3S07FS) Q2 MT3S11T (MT3S11FS)
0.48
+0.02 -0.04
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg 10 5 1.5 25 10 100 110(Note 2) 125 −55~125 °C °C Rating Q2 13 6 1 40 10 V V V mA mA mW Unit
fS6
1. Collector1 (C1) 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1)
JEDEC JEITA TOSHIBA Weight: 0.001g (typ.)
― ― 2-1F1A
Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board. Note 2: During two-element operation
Marking (top view)
6 5 4
Pin Assignment (top view)
B1 E2 B2
18
1 2 3
Q1
Q2
C1
E1
C2
1
2005-08-01
MT6L63FS
Electrical Characteristics Q1 (Ta = 25°C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequenc...