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MT6L63FS

Toshiba Semiconductor

VHF-UHF Band Low Noise Amplifier Application

MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Tw...


Toshiba Semiconductor

MT6L63FS

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Description
MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. 1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 Unit: mm 1.0±0.05 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications Lead (Pb)-free. 1 2 3 6 5 4 0.1±0.05 Mounted Devices www.DataSheet4U.com Q1 Corresponding three-pin products: TESM(fSM) mold products MT3S07T (MT3S07FS) Q2 MT3S11T (MT3S11FS) 0.48 +0.02 -0.04 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg 10 5 1.5 25 10 100 110(Note 2) 125 −55~125 °C °C Rating Q2 13 6 1 40 10 V V V mA mA mW Unit fS6 1. Collector1 (C1) 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1) JEDEC JEITA TOSHIBA Weight: 0.001g (typ.) ― ― 2-1F1A Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board. Note 2: During two-element operation Marking (top view) 6 5 4 Pin Assignment (top view) B1 E2 B2 18 1 2 3 Q1 Q2 C1 E1 C2 1 2005-08-01 MT6L63FS Electrical Characteristics Q1 (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequenc...




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