MT6L57AFS

MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. Unit: mm 1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 1.0±0.05 0.7±0.05 z Superior noise characteristics z Superior performance in buffer and oscillator applications. 1 2 3 6 5 4 0.1±0.05 Mounted Devices www.DataSheet4U.com Q1 Corresponding three-pin products: TESM(fSM) mold products MT3S06T (MT3S06FS) Q2 MT3S04AT (MT3S04AFS) 0.48 -0.04 fS6 +0.02 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg 10 5 1.5 15 7 100 110 (Note 2) 125 −55~125 Rating Q2 10 5 2 40 10 V V V mA mA mW °C °C Unit 1. Collector1 (C1) 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1) JEDEC JEIAJ Toshiba ― ― 2-1F1A Weight: 0.001g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewin...