A1693

2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1693 –80 –80 –6 –6 –3 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1693 –10max –10max –80min 50min∗ –1.5max 20typ 150typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–80V VEB=–6V IC=–50mA VCE=–4V, IC=–2A IC=–2A, IB=–0.2A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) www.DataSheet4U.com sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 10 IC (A) –3 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.3 IB2 (A) 0.3 ton (µs) 0.18typ tstg (µs) 1.10typ tf (µs) 0.21typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –6 –2 0 0m A – 0 15 V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –6 (V C E =–4V) mA –1 00 m A –8 0m A Collector Current I C (A) Collector Current I C (A) –4 –50mA –2 –4 –30mA e Te mp) e Te mp) Cas –2 –20mA –1 I C =–6A –4A –2A 0 0 –0.5 –1.0 –1.5 –2 I B =–10mA ˚C ( (Cas 0 0 –1 –2 –3 –4 0 0 –30˚C ...