Document
STW29NK50ZD
N-CHANNEL 500 V - 0.11Ω - 29A TO-247 Fast Diode SuperMESH™ MOSFET
PRODUCT PREVIEW
Table 1: General Features
TYPE STW29NK50ZD
s s
Figure 1: Package
ID 29 A PW 350 W
VDSS 500 V
RDS(on) < 0.15 Ω
TYPICAL RDS(on) = 0.11 Ω HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED www.DataSheet4U.com s GATE CHARGE MINIMIZED s LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY s FAST INTERNAL RECOVERY TIME
3 2 1
TO-247
DESCRIPTION The Fast SuperMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology.
Figure 2: Internal Schematic Diagram
APPLICATIONS s HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE
Table 2: Order Codes
PART NUMBER STW29NK50ZD MARKING W29NK50ZD PACKAGE TO-247 PACKAGING TUBE
Rev. 2 December 2004 1/7
STW29NK50ZD
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S)
www.DataSheet4U.com
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 KΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature
Value 500 500 ± 30 29 18.27 116 350 2.77 6000 4.5 -55 to 150
Unit V V V A A A W W/°C V V/ns °C
dv/dt (1) Tstg Tj
(*) Pulse width limited by safe operating area (1) ISD≤ 29 A, di/dt≤ 200 A/µs, VDD≤ V(BR)DSS, T J≤ TJMAX
Table 4: Thermal Data
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.36 50 300 °C/W °C/W °C
Table 5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 29 500 Unit A mJ
Table 6: Gate-Source Zener Diode
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Condition Min. 30 Typ. Max Unit A
Igs= ± 1mA (Open Drain)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
2/7
STW29NK50ZD
TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) On /Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on
www.DataSheet4U.com
Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance
Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125°C VGS = ± 20 V VDS = VGS, ID = 150 µA VGS = 10 V, ID = 14.5 A
Min. 500
Typ.
Max.
Unit S
1 50 ± 10 3 3.75 0.11 4.5 0.15
µA µA µA V Ω
Table 8: Dynamic
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 14.5 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 28 6000 570 155 TBD TBD TBD TBD 180 TBD TBD 200 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDD = 400 V, ID = 14.5 A, RG = 4.7 Ω, VGS = 10 V (Resistive Load see Figure 4)) VDD = 480 V, ID = 14.5 A, VGS = 10 V
Table 9: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 29 A, VGS = 0 ISD = 29 A, di/dt = 100 A/µs VDD = 30V, Tj = 25°C (see test circuit Figure 5) ISD = 29 A, di/dt = 100 A/µs VDD = 30V, Tj = 150°C (see test circuit Figure 5) TBD TBD TBD TBD TBD TBD Test Conditions Min. Typ. Max. 29 116 1.6 Unit A A V ns µC A ns µC A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area.
3/7
STW29NK50ZD
Figure 3: Unclamped Inductive Load Test Circuit Figure 6: Unclamped Inductive Wafeform
www.DataSheet4U.com
Figure 4: Switching Times Test Circuit For Resistive Load
Figure 7: Gate Charge Test Circuit
Figure 5: Test Circuit For Inductive Load Switching and Diode Recovery Times
4/7
STW29NK50ZD
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 .