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PMF780SN Dataheets PDF



Part Number PMF780SN
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel uTrenchMOS standard level FET
Datasheet PMF780SN DatasheetPMF780SN Datasheet (PDF)

PMF780SN N-channel µTrenchMOS™ standard level FET Rev. 01 — 10 February 2004 M3D102 Product data 1. Product profile 1.1 Description www.DataSheet4U.com N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 60 V s Ptot ≤ 0.56 W .

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PMF780SN N-channel µTrenchMOS™ standard level FET Rev. 01 — 10 February 2004 M3D102 Product data 1. Product profile 1.1 Description www.DataSheet4U.com N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 60 V s Ptot ≤ 0.56 W s ID ≤ 0.57 A s RDSon ≤ 920 mΩ. 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT323 (SC-70), simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBC870 Simplified outline 3 Symbol d MBB076 s SOT323 (SC-70) Philips Semiconductors PMF780SN N-channel µTrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PMF780SN SC-70 Description Plastic surface mounted package; 3 leads Version SOT323 Type number www.DataSheet4U.com 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −55 Max 60 60 ±20 0.57 0.36 1.15 0.56 +150 +150 0.47 0.94 Unit V V V A A A W °C °C A A Source-drain diode 9397 750 12764 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 — 10 February 2004 2 of 12 Philips Semiconductors PMF780SN N-channel µTrenchMOS™ standard level FET 120 Pder (%) 80 03aa17 120 Ider (%) 80 03aa25 www.DataSheet4U.com 40 40 0 0 50 100 150 Tsp (°C) 200 0 0 50 100 150 200 Tsp (°C) P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) ID I der = ------------------- × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 10 ID (A) 1 03an23 Limit RDSon = VDS / ID tp = 10 µ s 100 µ s 10-1 DC 1 ms 10 ms 100 ms 10-2 10-3 10-1 1 10 VDS(V) 102 Tsp = 25 °C; IDM is single pulse; VGS = 10 V. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 12764 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 — 10 February 2004 3 of 12 Philips Semiconductors PMF780SN N-channel µTrenchMOS™ standard level FET 5. Thermal characteristics Table 4: Rth(j-sp) Thermal characteristics Conditions F.


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