SRAM
K6F1008V2M, K6F1008S2M, K6F1008R2M Family
Document Title
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RA...
Description
K6F1008V2M, K6F1008S2M, K6F1008R2M Family
Document Title
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial draft Revise - Erase 100ns from KM68FS1000 Family - Add 150ns for KM68FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with special handling ISB1=1.0µA(Max) - Icc & Icc1(Read) decrease 10 to 5mA Revise - Change datasheet format - Remove reverse type package from product - Remove reserved speed bin(100ns) Revise - Add CSP type packaged product. - Improved ICC2
Draft Date
March 15, 1996 July 7, 1996
Remark
Advance Preliminary
www.DataSheet4U.com
1.0
December 1, 1996
Final
2.0
February 26, 1998
Final
3.0
July 29, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0 July 1998
K6F1008V2M, K6F1008S2M, K6F1008R2M Family
CMOS SRAM
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS Organization: 128K x8 bit Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K...
Similar Datasheet
- K6F1008S2M SRAM - Samsung Electronics