TE53N50E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTE53N50E/D .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive www.DataSheet4U.com loads are switched and offer additional safety margin against unexpected voltage transients. 2500 V RMS Isolated Isotop Package Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits Very Low Internal Parasitic Inductance IDSS and VDS(on) Specified at Elevated Temperature U. L. Recognized, File #E69369 G S Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS ™ ISOTOP ™ TMOS E-FET Designer's Data Sheet MTE53N50E Motorola Preferred Device TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM ® 4 1 2 3 D SOT–227B 1. 2. 3. 4. Source Gate Drain Source 2 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — ...