MRF9060R1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — –31 dBc www.DataSheet4U.com MRF9060R1 MRF9060SR1 945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360B–05, STYLE 1 NI–360 MRF9060R1 CASE 360C–05, STYLE 1 NI–360S MRF9060SR1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060R1 MRF9060SR1 Storage Temperature Range Operating Junction Temperature Tstg TJ Symbol VDSS VGS PD Value 65 –0.5, +15 159 0.91 219 1.25 –65 to +200 200 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Mi...