Freescale Semiconductor Technical Data
Document Number: MRF9060N Rev. 10, 5/2006
RF Power Field Effect Transistors
N ...
Freescale Semiconductor Technical Data
Document Number: MRF9060N Rev. 10, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — - 31.5 dBc Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power www.DataSheet4U.com Features Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Integrated ESD Protection 200_C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF9060NR1 MRF9060NBR1
945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF9060NR1
CASE 1337 - 03, STYLE 1 TO - 272- 2 PLASTIC MRF9060NBR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value ...
