MRF9030LR1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.5 dBc Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs www.DataSheet4U.com Freescale Semiconductor, Inc... CASE 360B - 05, STYLE 1 NI - 360 MRF9030LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF9030LSR1 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9030LR1 MRF9030LSR1 Tstg TJ Characteristic Thermal Resistance, Junction to Case MRF9030LR1 MRF9030LSR1 Symbol Rθ...