MRF9011LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR901LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current–Gain — Bandwidth Product Low Noise Figure @ f = 1.0 GHz — NF(matched) = 1.8 dB (Typ) (MRF9011LT1) NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3) High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3) Guaranteed RF Parameters (MRF9011LT1) Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MMBR901LT1, T3 MPS901 MRF901 MRF9011LT1 IC = 30 mA SURFACE MOUNTED HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 318–08, STYLE 6...