STK0760P

Semiconductor STK0760P Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=600V(Min.) Low Crss : Crss=12pF(Typ.) Low gate charge : Qg=28nC(Typ.) Low RDS(on) :RDS(on)=1.2Ω(Max.) www.DataSheet4U.com Ordering Information Type NO. STK0760P Marking STK0760 Package Code TO-220AB-3L Outline Dimensions 9.80~10.20 Φ3.70 Max. 8.20~8.60 unit : mm 4.35~4.65 1.20~1.40 6.30~6.70 9.05~9.35 12.68~13.48 1.62 Max. 0.95~1.05 1.49~1.59 1.37 Max. 0.95 Max. 2.20~2.60 9.85~10.15 2.54 Typ. 5.08 Typ. 3.00° 0.40~0.60 2.35~2.45 9.85~10.15 PIN Connections 1. Gate 2. Drain 3. Source KSD-T0P002-000 1 STK0760P Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) www.DataSheet4U.com * (Tc=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 7 3.2 28 65 7 230 7 7.5 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 1.92 83.3 Unit ℃/W KSD-T0P002-000 2 STK0760P Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain...