W34NB20

N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH™ MOSFET Table 1. General Features Type www.DataSheet4U.com STW34NB20 Figure 1. Package RDS(on) < 0.075 Ω ID 34 A VDSS 200 V STW34NB20 FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.062 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ Figure 2. Internal Schematic Diagram DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING ■ Table 2. Order Codes Part Number STW34NB20 Marking W34NB20 Package TO-247 Packaging TUBE REV. 2 April 2004 1/10 STW34NB20 Table 3. Absolute Maximum Ratings Symbol VDS VDGR VGS ID ID IDM www.DataSheet4U.com (1) Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (cont.) at TC = 25 °C Drain Current (cont.) at TC = 100 °C Drain Current (pulsed) Total Dissipation at TC = 25 °C Derating Factor Value 200 200 ± 30 34 21 136 180 1.44 -65 to 150 150 Unit V...