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D12NF06 Dataheets PDF



Part Number D12NF06
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel Power MOSFET
Datasheet D12NF06 DatasheetD12NF06 Datasheet (PDF)

STD12NF06T4 Datasheet N-channel 60 V, 80 mΩ typ., 12 A, STripFET II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications PTOT 30 W G(1) S(3) AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize inp.

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STD12NF06T4 Datasheet N-channel 60 V, 80 mΩ typ., 12 A, STripFET II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications PTOT 30 W G(1) S(3) AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD12NF06T4 Product summary Order code STD12NF06T4 Marking D12NF06 Package DPAK Packing Tape and reel DS2577 - Rev 8 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope EAS(3) Single pulse avalanche energy Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 12 A, di/dt ≤ 200 A/ns, VDD = 80% V(BR)DSS 3. Starting TJ = 25 °C, ID = 6 A, VDD = 30 V. Symbol RthJC RthJA Table 2. Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-ambient STD12NF06T4 Electrical ratings Value 60 60 ±20 12 8.5 48 30 15 140 -55 to 175 Unit V V V A A W V/ns mJ °C Value 5 100 Unit °C/W DS2577 - Rev 8 page 2/15 STD12NF06T4 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 3. Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 60 V, TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A 1. Defined by design, not subject to production test. Min. Typ. Max. Unit 60 V 1 µA 10 ±100 nA 2 3 4 V 80 100 mΩ Symbol gfs Ciss Coss Crss Qg Qgs Qgd Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Table 4. Dynamic Test conditions Min. Typ. Max. Unit VDS = 15 V, ID = 6 A - 5 S - 315 pF VDS = 25 V, f = 1 MHz, VGS = 0 V - 70 pF - 30 pF VDD = 48 V, ID = 20 A, VGS = 10 V, - RG = 4.7 Ω - (see Figure 14. Test circuit for gat.


B633 D12NF06 W34NB20


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