Document
STD12NF06T4
Datasheet
N-channel 60 V, 80 mΩ typ., 12 A, STripFET II Power MOSFET in a DPAK package
TAB
23 1 DPAK
D(2, TAB)
Features
Order code
VDS
RDS(on) max.
ID
STD12NF06T4
60 V
0.1 Ω
12 A
• Exceptional dv/dt capability • 100% avalanche tested • Low gate charge
Applications
• Switching applications
PTOT 30 W
G(1) S(3)
AM01475v1_noZen
Description
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Product status link STD12NF06T4
Product summary
Order code
STD12NF06T4
Marking
D12NF06
Package
DPAK
Packing
Tape and reel
DS2577 - Rev 8 - October 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
EAS(3)
Single pulse avalanche energy
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width is limited by safe operating area. 2. ISD ≤ 12 A, di/dt ≤ 200 A/ns, VDD = 80% V(BR)DSS 3. Starting TJ = 25 °C, ID = 6 A, VDD = 30 V.
Symbol RthJC RthJA
Table 2. Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-ambient
STD12NF06T4
Electrical ratings
Value 60 60 ±20 12 8.5 48 30 15 140
-55 to 175
Unit V V V
A
A W V/ns mJ
°C
Value 5
100
Unit °C/W
DS2577 - Rev 8
page 2/15
STD12NF06T4
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 3. Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage VGS = 0 V, ID = 250 µA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 60 V
VGS = 0 V, VDS = 60 V, TC = 125 °C(1)
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance VGS = 10 V, ID = 6 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
60
V
1 µA
10
±100 nA
2
3
4
V
80
100 mΩ
Symbol gfs Ciss Coss Crss Qg Qgs Qgd
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 4. Dynamic
Test conditions
Min. Typ. Max. Unit
VDS = 15 V, ID = 6 A
-
5
S
-
315
pF
VDS = 25 V, f = 1 MHz, VGS = 0 V
-
70
pF
-
30
pF
VDD = 48 V, ID = 20 A, VGS = 10 V,
-
RG = 4.7 Ω
-
(see Figure 14. Test circuit for gat.