BUF650
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technol...
BUF650
Silicon
NPN High Voltage Switching
Transistor
Features
D Simple-sWitch-Off
Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D www.DataSheet4U.com
Very low dynamic saturation
D Very low operating temperature D Optimized RBSOA D High reverse voltage
14283
Applications
Electronic lamp ballast circuits Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 10 15 5 7.5 70 150 –65 to +150 Unit V V V V A A A A W °C °C
Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range
Tcase ≤ 25° C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 1.78 Unit K/W
TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97
1 (8)
BUF650
Electrical Characteristics
Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage g www.DataSheet4U.com DC forward current transfer ratio Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150° C IC = 300 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 1.6 A; IB = 0.4 A IC = 5 A; IB = 1.6 ...