Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification Complementary to 2SD638...
Transistor
2SB643, 2SB644
Silicon
PNP epitaxial planer type
For low-power general amplification Complementary to 2SD638 and 2SD639
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s Features
q
1.5 R0.9 R0.9
1.0±0.1
www.DataSheet4U.com Parameter Collector to base voltage Collector to
0.85
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –30 –60 –25 –50 –7 –1 – 0.5 600 150 –55 ~ +150
Unit
0.55±0.1
2SB644 2SB643
V
3 2 1
emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package
2.5 2.5
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 2SB643 2SB644 2SB643 2SB644
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –7 85 40 90 – 0.35 200 6
*2
min
typ
1.25±0.05
2SB643
0.45±0.05
max –100 –1
4.1±0.2
s Absolute Maximum Ratings
(Ta=25˚C)
R
0.
4.5±0.1
7
M type package allowing easy automati...
