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MG150Q2YS65H
High Power & High Speed Switching Applications
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MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm · High input impedance · Enhancement-mode · The electrodes are isolated from case. Equivalent Circuit www.DataSheet4U.com E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.) ― ― 2-95A4A Maximum Ratings (Ta = 25°C...
Toshiba Semiconductor
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MG150Q2YS65H
High Power & High Speed Switching Applications
- Toshiba Semiconductor
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