FDS6680AS

FDS6680AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6680AS tm 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Applications 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V Includes SyncFET Schottky body diode Low gate charge (22nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability DC/DC converter Low side notebooks D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device...