SI7454DP

www.vishay.com Si7454DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 6 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 100 0.034 0.040 24 7.8 Single FEATURES TrenchFET® power MOSFETs New low thermal resistance PowerPAK® package with low 1.07 mm profile PWM optimized for fast switching 100 % Rg tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Primary side switch for high density DC/DC Telecom / server 48 V, full- / half-bridge DC/DC Industrial and 42 V automotive D Available G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free PowerPAK SO-8 Si7454DP-T1-E3 Si7454DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 10 s STEADY STATE Drain-source voltage VDS 100 100 Gate-source voltage VGS ± 20 ± 20 Continuous drain current (TJ = 150 °C) a TA = 25 °C TA = 85 °C ID 7.8 5 5.7 3.6 Pulsed drain current IDM 30 30 Avalanche current Single avalanche energy (duty cycle  1 %) L = 0.1 mH IAS EAS 25 31 25 31 Continuous source current (diode conduction) a IS 4 1.6 Maximum power dissipation a TA = 25 °C TA = 85 °C PD 4.8 2.6 1.9 1 Operating junction and storage temperature range Soldering recommendations (peak temperature) b, c ...