N-Channel 20-V (D-S) Fast Switching MOSFET
Si7458DP
New Product
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20
FEATURES
...
Description
Si7458DP
New Product
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20
FEATURES
ID (A)
22 19
rDS(on) (W)
0.0045 @ VGS = 4.5 V 0.0075 @ VGS = 2.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
APPLICATIONS
D Synchronous Rectifier–Low Output Voltage D Portable Computer Battery Selection or Protection
www.DataSheet4U.com
PowerPakt SO-8
D 6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
G
S N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
20 "12 22
Steady State
Unit
V
13.4 10.7 50 A 1.6 1.9 1.2 –55 to 150 W _C
ID IDM IS PD TJ, Tstg
17.6
4.3 5.2 3.3
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71821 S-20012—Rev. A, 04-Mar-02 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7458DP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Cur...
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