SI7458DP

Si7458DP New Product Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 22 19 rDS(on) (W) 0.0045 @ VGS = 4.5 V 0.0075 @ VGS = 2.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Synchronous Rectifier–Low Output Voltage D Portable Computer Battery Selection or Protection www.DataSheet4U.com PowerPakt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "12 22 Steady State Unit V 13.4 10.7 50 A 1.6 1.9 1.2 –55 to 150 W _C ID IDM IS PD TJ, Tstg 17.6 4.3 5.2 3.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71821 S-20012—Rev. A, 04-Mar-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7458DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Cur...