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SRAF1080

Mospec Semiconductor

(SRAF1070 - SRAF10100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers …Using the Schottky Barrier principle with a Molyb...


Mospec Semiconductor

SRAF1080

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Description
MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers …Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. www.DataSheet4U.com * Low Power Loss & High efficiency. * 125¢J Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory SRAF1070 thru SRAF10100 SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 70-100 VOLTS ITO-220AC MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol 70 VRRM VRWM VR VR(RMS) IF(AV) 70 SRAF10 80 80 90 90 100 100 V Unit 49 56 10 63 70 V DIM A IFM 20 V IFSM 175 V TJ , TSTG -65 to +125 ¢J A B C D E F G H I J K L M N P O Q MILLIMETERS MIN MAX 15.05 15.15 13.35 13.45 10.00 10.10 6.55 6.65 2.65 2.75 --1.00 1.15 1.25 0.55 0.65 4.80 5.20 3.00 3.20 1.10 1.2...




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