SSM6J25FE

SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V) Ron = 430mΩ (max) (@VGS = -2.5 V) Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 1.6±0.05 1.0±0.05 0.5 0.5 Absolute Maximum Ratings (Ta = 25°C) 1 6 Characteristics Drain-Source voltage Symbol VDS Rating Unit -20 V 2 5 3 4 0.12±0.05 0.55±0.05 Gate-Source voltage VGSS ± 12 V Drain current DC ID -0.5 A Pulse IDP -1.5 Drain power dissipation Channel temperature Storage temperature range PD 500 mW (Note 1) Tch 150 °C Tstg −55 to 150 °C 1,2,5,6 :Drain 3 :Gate ES6 4 :Source Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA TOSHIBA ― 2-2N1A operating temperature/current/voltage, etc.) are within the Weight: 3.0 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Marking 654 Equivalen...