SSM6J23FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J23FE
High Current Switching Applications DC-DC Converter
Unit: mm
Suitable for high-density mounting due to compact package
Low on-resistance:
Ron = 160 mΩ (max) (@VGS = -4.0 V) Ron = 210 mΩ (max) (@VGS = -2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
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