SSM6J08FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM6J08FU
Power Management Switch DC-DC ...
SSM6J08FU
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSII)
SSM6J08FU
Power Management Switch DC-DC Converter
Unit: mm
Small Package Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V)
: Ron = 0.26 Ω (max) (@VGS = −2.5 V) Low Gate Threshold Voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−20
V
Gate-Source voltage
VGSS
±12
V
Drain current
DC
ID
−1.3
A
Pulse
IDP (Note 2)
−2.6
Drain power dissipation
PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2J1D
reliability significantly even if the operating conditions (i.e.
Weight: 6.8 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Fig: 1.
Note 2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
Fig 1: 25.4 mm × 25.4 mm × 1.6 t, Cu P...