(IN4933 - IN4937) 1.0A FAST RECOVERY RECTIFIER
WTE
POWER SEMICONDUCTORS
1N4933 – 1N4937
1.0A FAST RECOVERY RECTIFIER
Features
! ! ! ! ! Diffused Junction Low Forward...
Description
WTE
POWER SEMICONDUCTORS
1N4933 – 1N4937
1.0A FAST RECOVERY RECTIFIER
Features
! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A
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Mechanical Data
Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.34 grams (approx.) Mounting Position: Any Marking: Type Number D
DO-41 Dim Min Max A 25.4 — B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm
C
! ! ! ! ! !
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
@TA=25°C unless otherwise specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 55°C
Symbol VRRM VRWM VR VR(RMS) IO
1N4933
1N4934
1N4935
1N4936
1N4937
Unit
50 35
100 70
200 140 1.0
400 280
600 420
V V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range @IF = 1.0A @TA = 25°C @TA = 100°C
IFSM VFM IRM trr Cj Tj TSTG
30 1.2 5.0 100 200 15 -65 to +125 -65 to +150
A V µA nS pF °C °C
*Glass passivated forms are available upon re...
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