MRAL2023-6
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRAL2023-6 is a Common Base Device Designed for class C...
MRAL2023-6
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI MRAL2023-6 is a Common Base Device Designed for class C Amplifier Applications in L-Band FM Microwave Links.
PACKAGE STYLE .250 2L FLG (C)
www.DataSheet4U.com
FEATURES INCLUDE:
Gold Metallization Emitter Ballasting Input Matching
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 1.25 A 40 V 21 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 8.0 °C/W
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS
SYMBOL
BVCES BVEBO ICBO hFE COB PG ηC IC = 50 mA
TC = 25 °C
TEST CONDITIONS
IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 22 V VCE = 22 V POUT = 6.0 W IC = 500 mA f = 1.0 MHz f = 2000 to 2300 MHz
MINIMUM TYPICAL MAXIMUM
40 3.5 1.25 10 90 10 6.8 40
UNITS
V V mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
...
