MHW8205R

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW8205R/D High Output Mirror Power Doubler 860 MHz CATV Amplifier Specified for 77, 110 and 128–Channel Performance Broadband Power Gain  @ f = 40–860 MHz Gp = 20.2 dB (Typ) Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz All Gold Metallization 7 GHz fT Ion–Implanted Transistors The RF Line MHW8205R 20.2 dB GAIN 860 MHz 128–CHANNEL CATV AMPLIFIER ARCHIVE INFORMATION CTB = –66 dB (Typ) MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value +70 +28 –20 to +100 –40 to +100 Unit dBmV Vdc °C °C CASE 714Y–03, STYLE 2 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Power Gain 860 MHz Slope 50 MHz 40–860 MHz Symbol BW Gp S — IRL/ORL 19 — CSO128 CSO110 CSO77 XMD128 XMD110 XMD77 CTB128 CTB110 CTB77 NF — — — — — — — — — — — — — 365 — — –69 –70 –80 –72 –67 –71 –66 –63 –71 5.0 5.8 6.2 7.0 400 — 0.006 –60 –63 –68 dBc 128–Channel FLAT 110–Channel FLAT 77–Channel FLAT 128–Channel FLAT 110–Channel FLAT 77–Channel FLAT 50 MHz 550 MHz 750 MHz 860 MHz –64 –62 –68 dBc –63 –61 –69 6.0 — — 8.0 435 dB dB dB/MHz dBc 128–Channel FLAT 110–Channel FLAT 77–Channel FLAT Min 40 19.3 20 0 — Typ — 19.8 20.2 .4 0.3 Max 860 20.3 21.5 1.5 1.0 Unit MHz dB dB dB Gain Flatness (40–860 MHz, Peak to Valley) Return Loss — Input/Output (Zo = 75 Ohms) @ 40 MHz @...