DatasheetsPDF.com

GBU4M Dataheets PDF



Part Number GBU4M
Manufacturers Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor
Description (GBU4x) SILICON BRIDGE RECTIFIERS
Datasheet GBU4M DatasheetGBU4M Datasheet (PDF)

BL FEATURES GALAXY ELECTRICAL GBU4A --- GBU4M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A SILICON BRIDGE RECT IFIERS Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded plas tic technique Plas tic m aterrial has U/L flam m ability clas s ification www.DataSheet4U.com GBU .933(23.7) .894(22.7) .185(4.7) .165(4.2) .160(4.1) .140(3.5) 45 .310(7.9) .290(7.4) 0 .140(3.56) .130(3.30) 94V-O + + .075(1.9)R.TYP. .085(2.16) .065(1.65) .740(18.8) .720(18.3) Mountin.

  GBU4M   GBU4M


Document
BL FEATURES GALAXY ELECTRICAL GBU4A --- GBU4M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A SILICON BRIDGE RECT IFIERS Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded plas tic technique Plas tic m aterrial has U/L flam m ability clas s ification www.DataSheet4U.com GBU .933(23.7) .894(22.7) .185(4.7) .165(4.2) .160(4.1) .140(3.5) 45 .310(7.9) .290(7.4) 0 .140(3.56) .130(3.30) 94V-O + + .075(1.9)R.TYP. .085(2.16) .065(1.65) .740(18.8) .720(18.3) Mounting pos ition: Any Glass passivated chip junctions .080(2.03) .060(1.52) _ ~ ~ + .100(2.54) .085(2.16) .190(4.83) .210(5.33) .050(1.27) .040(1.02) .710(18) .690(17.5) .085(2.18) .075(1.90) .022(.56) .018(.46) inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. GBU 4A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard Tc=100 output current @TA =40 GBU 4B 100 70 100 GBU 4D 200 140 200 GBU 4G 400 280 400 4.0 3.0 150.0 GBU 4J 600 420 600 GBU 4K 800 560 800 GBU 4M 1000 700 1000 UNITS V V V A VRRM V R MS VDC 50 35 50 (note 1) (note 2) IF (AV) Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load Maximum instantaneous f orw ard voltage at 2.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 (note 2) (note 1) Operating junction temperature range Storage temperature range IF SM A VF IR CJ RθJA RθJC TJ TSTG 100 1.0 5.0 500.0 45 22.0 4.2 - 55 ---- + 150 - 55 ---- + 150 V μA mA pF /W Typical junction capacitance per leg (note 3) Typical thermal resistance per leg N OTE: 1. Unit case m ounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm ) AI. Plate. 2. U nits m ounted on P.C .B. with 0.5x0.5" (12x12m m) copper pads and 0.375" (9.5m m ) lead length. 3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts. www.galaxycn.com Document Number 0287025 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- DERATING CURVE FOR OUTPUT RRECTIFIED CURRENT INSTANTANEOUS FORWARD CURRENT, AMPERES 100 GBU4A --- GBU4M FIG.2 -- TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD CURRENT, AMPERES 4 .0 10 3 .0 2 .0 1.0 TJ =25 Pulse Width =300uS www.DataSheet4U.com 1 .0 0.1 0 0 50 1 00 1 50 .01 .4 .6 .8 1 1.2 1.4 1.6 TEMPERATURE, FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD PEAK FORWARD SURGE CURRENT, AMPERES INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES DURGE CURRENT 150 TJ=TJ max. SINGLE SINE-WAVE (JEDEC METHOD) 500 100 T J= 1 2 5 120 10 90 60 1.0 30 1.0 CYCLE 0.1 T J=25 .01 20 80 100 1 10 100 0 40 60 NUMBER OF CYCLES AT 60Hz FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG PERCENT OF RATED PEAK REVERSE VOLTAGE FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, JUNCTION CAPACITANCE, pF 1000 TJ=25 f=1.0 MHz VSIG=50mVp-p 100 10 100 40 /W 1 .1 10 .1 50-400V 600-1000V 1 4 10 100 .01 .1 1 10 100 REVERSE VOLTAGE, VOLTS t, HEATING TIME, sec. www.galaxycn.com Document Number 0287025 BLGALAXY ELECTRICAL 2. .


GBU4J GBU4M GBU4M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)