FDP8876

FDP8876 N-Channel PowerTrench® MOSFET November 2005 FDP8876 N-Channel PowerTrench® MOSFET 30V, 71A, 8.5mΩ General Descriptions This N-Channel MOSFET has been designed specifically to Features „ rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A „ rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability „ RoHS Compliant www.DataSheet4U.com improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. DRAIN (FLANGE) SOURCE DRAIN GATE D G S TO-220AB FDP SERIES MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 4.5V) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature Continuous (TC = 25oC, VGS = 10V) 70 64 Figure 4 180 70 -55 to 175 A A A mJ W o Ratings 30 ±20 Units V V C Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263,1in2copper pad area 2.14 62 oC/W o C/W Package Marking and Ordering Information Device Marking FDP8876 Device FDP8876 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units ©2005 Fairchild Semiconductor Corporation FDP8876 Rev. A 1 www.fairchildsemi.co...