SRFET
AON6710 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFETTM The AON6710/L uses adv...
SRFET
AON6710 N-Channel Enhancement Mode Field Effect
Transistor
TM
General Description
SRFETTM The AON6710/L uses advanced trench technology with a monolithically integrated
Schottky www.DataSheet4U.com diode to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a low side FET in SMPS, load switchng and general purpose applications. AON6710 and AON6710L are electrically identical. -RoHS Compliant -AON6710L is Halogen Free
Features
VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 6.7mΩ (VGS = 4.5V)
Top View Fits SOIC8 footprint !
S S S G D D D D G
D SRFET TM Soft Recovery MOSFET: Integrated
Schottky Diode S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain BJ Current TC=25°C TC=100°C ID IDM IDSM IAR
C
Maximum 30 ±20 30 30 100 19 15 30 135 62 25 2.5 1.6 -55 to 150
Units V V A
Pulsed Drain Current Continuous Drain TA=25°C H Current TA=70°C C Avalanche Current Repetitive avalanche energy L=0.3mH Power Dissipation
B
A A mJ W W °C
EAR PD PDSM TJ, TSTG
TC=25°C TC=100°C TA=25°C TA=70°C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC
Typ 14.2 42 1.2
Max 20 50 2.0
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6...