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SBJ200-06J

Sanyo Semicon Device

Schottky Barrier Diode

Ordering number : ENA0193 SBJ200-06J SBJ200-06J Applications • High www.DataSheet4U.com Schottky Barrier Diode (Twin ...


Sanyo Semicon Device

SBJ200-06J

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Description
Ordering number : ENA0193 SBJ200-06J SBJ200-06J Applications High www.DataSheet4U.com Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 20A Rectifier frequency rectification (switching regulators, converters, choppers). Features Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.55V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=90°C 50Hz sine wave, 1 cycle Conditions Ratings 60 66 20 120 --55 to +150 --55 to +150 Unit V V A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=2mA, Tj=25°C* IF=10A, Tj=25°C* VR=30V, Tj=25°C* VR=60V, Tj=25°C* VR=10V, Tj=25°C* Junction-Case : Smoothed DC Ratings min 40 0.55 10 20 450 3.2 0.6 100 200 typ max Unit V V µA µA pF °C / W Note) * : Value per element Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other appli...




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