K2372

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor www.DataSheet4U.com PACKAGE DIMENSIONS (in millimeters) designed for high voltage switching applications. FEATURES Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) Low Ciss Ciss = 3600 pF TYP. High Avalanche Capability Ratings 1 3.0 ± 0.2 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TC = 25 °C) Total Power Dissipation (Ta = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 19 MIN. 450/500 ± 30 ± 25 ± 100 160 3.0 150 –55 ~ +150 25 446 V V A A W W °C °C A mJ 2.2 ± 0.2 5.45 1.0 ± 0.2 5.45 4.5 ± 0.2 2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A) 6.0 0.6 ± 0.1 2.8 ± 0.1 VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS MP-88 1. Gate 2. Drain 3. Source 4. Fin (Drain) Drain Gate Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to thi...