®
STW8NA80 STH8NA80FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE STW 8NA80 STH8NA80F I w...
®
STW8NA80 STH8NA80FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
PRELIMINARY DATA
TYPE STW 8NA80 STH8NA80F I www.DataSheet4U.com
s s s s s s s
V DSS 800 V 800 V
R DS(on) < 1.50 Ω < 1.50 Ω
ID 7.2 A 4.5 A
TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
2 1
3
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Valu e STW 8NA80 ST H8NA80FI 800 800 ± 30
o
Unit
V DS V DGR V GS ID ID I DM ( ) P tot V ISO T s tg Tj
Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature
o
V V V 4.5 2.8 28.8 70 0.56 4000 A A A W W/ oC V
o o
7.2 4.5 28.8 17...