N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
Description
®
STW80N06-10
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STW80N06-10
www.DataSheet4U.com
s s s s s s s s
V DSS 60 V
R DS(on) < 0.010 Ω
ID 80 A
TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATU...
