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D1330 Dataheets PDF



Part Number D1330
Manufacturers Panasonic
Logo Panasonic
Description 2SD1330
Datasheet D1330 DatasheetD1330 Datasheet (PDF)

Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter (0.4) Unit: mm 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.0±0.2 2.4±0.2 0.45±0.05 1 R 0.9 R 0.7 www.DataSheet4U.c.

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Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter (0.4) Unit: mm 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.0±0.2 2.4±0.2 0.45±0.05 1 R 0.9 R 0.7 www.DataSheet4U.com 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 600 150 −55 to +150 Unit V V V A A mW °C °C 3 (2.5) 2 (2.5) 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C (0.85) 0.55±0.1 1 : Base 2 : Collector 3 : Emitter M-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3 VCE(sat) VBE(sat) fT Cob Ron Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 10 1 200 60 0.13 0.4 1.2 V V MHz pF Ω Min 25 20 12 100 800 Typ Max Unit V V V nA  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification *3: Ron Measurement circuit 1 kΩ Rank hFE1 R 200 to 350 S 300 to 500 T 400 to 800 IB = 1 mA f = 1 kHz V = 0.3 V VB VV VA Ron = VB × 1 000 (Ω) VA − VB 4.1±0.2 4.5±0.1 Publication date: November 2002 SJC00217BED 1 2SD1330 PC  Ta 800 1.2 IB = 4.0 mA IC  VCE Ta = 25°C 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA 0.2 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 25 Collector power dissipation PC (mW) 700 1.0 500 400 300 200 100 0 Collector current IC (A) 600 10 1 Ta = 75°C 25°C 0.1 −25°C 0 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 0.01 0.01 0.1 1 10 www.DataSheet4U.com Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC 100 hFE  IC 1 200 VCE = 2 V fT  I E 400 350 VCB = 10 V Ta = 25°C Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 Forward current transfer ratio hFE Transition frequency fT (MHz) 1 000 10 300 250 200 150 100 50 0 −1 800 Ta = 75°C 600 25°C −25°C 400 25°C 1 Ta = −25°C 75°C 0.1 200 0.01 0.01 0.1 1 10 0 0.01 0.1 1 10 −10 −100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 IE = 0 Ta = 25°C f = 1 MHz 1 000 Ron  IB Ron measurement circuit IB = 1 mA 20 16 ON resistance Ron (Ω) 100 VB V VA f = 1 kHz V = 0.3 V 12 10 8 1 4 0 1 10 100 0.1 0.01 0.1 1 10 Collector-base voltage VCB (V) Base current IB (mA) 2 SJC00217BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. www.DataSheet4U.com (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may .


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