MB82DP02183C-65L

FUJITSU SEMICONDUCTOR DATA SHEET DS05-11422-3E MEMORY Mobile FCRAMTM CMOS 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory www.DataSheet4U.com MB82DP02183C-65L CMOS 2,097,152-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface ■ DESCRIPTION The Fujitsu MB82DP02183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format. MB82DP02183C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM. This MB82DP02183C is suited for mobile applications such as Cellular Handset and PDA. *: FCRAM is a trademark of Fujitsu Limited, Japan ■ FEATURES Asynchronous SRAM Interface Fast Access Cycle Time : tAA = tCE = 65 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Low Voltage Operating Condition : VDD = +2.6 V to +3.5 V Wide Operating Temperature : TA = -30 °C to +85 °C Byte Control by LB and UB Low Power Consumption : IDDA1 = 30 mA Max IDDS1 = 80 µA Max Various Power Down mode : Sleep 4M-bit Partial 8M-bit Partial Shipping Form : Wafer/Chip, 71-ball plastic FBGA package Copyright© 2004-2006 FUJITSU LIMITED All rights reserved MB82DP02183C-65L ■ PIN ASSIGNMENT (TOP VIEW) A B C D E F G H J K L M 8 7 www.DataSheet4U.com NC NC NC NC A11 A8 WE DU LB A15 A12 A19 CE2 DU UB A6 A3 NC A13 A9 A20 DU A18 A5 A2 NC A14 A10 A16 NC DQ7 NC DQ16 VSS...