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SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08
OptiMOS® Power-Transistor
Feature
• N-Channel
Product S...
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SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08
OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID
P- TO262 -3-1 P- TO263 -3-2
55 8 80
P- TO220 -3-1
V mΩ A
Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
Type SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67060-S4283 Q67060-S4284 Q67060-S7430
Marking 2N0608 2N0608 2N0608
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 450 21.5 6 ±20 215 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
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SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.46 max. 0.7 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteris...