TSFF5210

End of Life - Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1) www.vishay.com TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES Package type: leaded Package form: T-1 3/4 Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 870 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Infrared video data transmission between camcorder and TV set Free air data transmission systems with high modulation frequencies or high data transmission rate requirements Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSFF5210 Ie (mW/sr) 180 ϕ (°) ± 10 Note Test conditions see table “Basic Characteristics” λp (nm) 870 tr (ns) 15 ORDERING INFORMATION ORDERING CODE TSFF5210 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ Rev. 1.9, 28-Nov-2023 1 Document Number: 81090 For technical questions, contact: emittertechsupport...