TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK192A
FM Tuner Applications VHF Band Amplifier Applica...
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK192A
FM Tuner Applications VHF Band Amplifier Applications
2SK192A
Unit: mm
· High power gain: GPS = 24dB (typ.) (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDO IG PD Tj Tstg
Rating
-18 10 200 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate leakage current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure
IGSS
VGS = -1.0 V, VDS = 0
V (BR) GDO IG = -100 mA
IDSS (Note)
VGS = 0, VDS = 10 V
VGS (OFF) VDS = 10 V, ID = 1 mA
ïYfsï
VGS = 0, VDS = 10 V, f = 1 kHz
Ciss Crss GPS
VDS = 10 V, VGS = 0, f = 1 MHz VGD = -10 V, f = 1 MHz VDD = 10 V, f = 100 MHz (Figure 1)
NF VDD = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification Y: 3.0~7.0, GR: 6.0~14.0, BL: 12.0~24.0
Min Typ. Max Unit
¾ ¾ -10 nA
-18 ¾
¾
V
3 ¾ 24 mA
-1.2 -3
¾
V
¾ 7 ¾ mS
¾ 3.5 ¾ pF
¾ ¾ 0.65 pF
¾ 24 ¾ dB
¾ 1.8 3.5 dB
1 2003-04-04
2SK192A
L1: 0.8 mmf Ag plated Cu wire 3 turns, 10 mm ID, 10 mm length L2: 0.8 mmf Ag plated Cu wire 3.5 turn...