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2N5581 Dataheets PDF



Part Number 2N5581
Manufacturers Semicoa Semiconductor
Logo Semicoa Semiconductor
Description Silicon NPN Transistor
Datasheet 2N5581 Datasheet2N5581 Datasheet (PDF)

2N5581 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5581J) www.DataSheet4U.com Applications • General purpose switching • Low power • NPN silicon transistor • JANTX level (2N5581JX) • JANTXV level (2N5581JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Features • • • • Please contact Semicoa fo.

  2N5581   2N5581


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2N5581 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5581J) www.DataSheet4U.com Applications • General purpose switching • Low power • NPN silicon transistor • JANTX level (2N5581JX) • JANTXV level (2N5581JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Features • • • • Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Hermetically sealed TO-46 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/423 Benefits • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO IC PT PT TJ TSTG TC = 25°C unless otherwise specified Rating 50 75 800 500 2.86 2 11.43 -55 to+200 -55 to+200 Unit Volts Volts mA mW mW/°C W mW/°C °C °C Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5581 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage www.DataSheet4U.com Collector-Base Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 75 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150°C VEB = 6 Volts VEB = 4 Volts Min 50 Typ Max 10 10 10 10 10 Units Volts µA nA µA µA nA Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Parameter Saturated Turn-On Time Saturated Turn-Off Time Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55°C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 30 35 40 40 20 15 Typ Max Units 120 1.2 2.0 0.3 1.0 Volts Volts Symbol |hFE| hFE COBO CIBO Test Conditions VCE = 20 Volts, IC = 50 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min 2.5 30 Typ Max Units 8 25 pF pF Symbol tON tOFF Test Conditions Min Typ Max 35 300 Units ns ns Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com .


LFE8423 2N5581 LB11850V


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