N-channel Power MOSFET
STY80NM60N
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh™ Power MOSFET
Preliminary Data
Features
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Description
STY80NM60N
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh™ Power MOSFET
Preliminary Data
Features
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Type
VDSS 600 V
RDS(on) < 0.040 Ω
ID 80 A
Pw 560 W
STY80NM60N
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100% avalanche tested Low input capacitance and gate charge Low gate input resistance Max247
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Application
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Switching applications
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 80NM60N Package Max247 Packaging Tube
Order code STY80NM60N
December 2007
Rev 2
1/9
www.st.com 9
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
STY80NM60N
1
Electrical ratings
Table 2.
Symbol VDS VGS ID
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 600 ±25 80 50.4 320 560 4.48 15 –55 to 150 150 Unit V V A A A W W/°C V/ns °C °C
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ID IDM
(1)
PTOT dv/dt (2) Tstg Tj
Peak diode recovery voltage slope Storage ...
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