GaAs Linear Integrated Circuit GaAs Monolithic
TG2216TU
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2216TU
RF SPDT Switch
Antenna switches for Bluetooth ...
Description
TG2216TU
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2216TU
RF SPDT Switch
Antenna switches for Bluetooth Class1, wireless LAN and PHS Filter switching for mobile communication
Features
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· · · · ·
Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz = 0.7dB (typ.) @2.5 GHz High isolation: ISL = 25dB (typ.) @1.0 GHz = 23dB (typ.) @2.5 GHz High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: UF6 package (2.0 × 2.1 × 0.7 mm) Weight: 0.007g (typ.)
Pin Connection and Marking (top view)
VC1 6 RFcom 5 VC2 4
Equivalent Circuit
VC1 6 RFcom 5 VC2 4
US
1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2
Maximum Ratings (Ta = 25°C)
Characteristics Control voltage Input power Total power dissipation Operating temperature range Storage temperature range Symbol VC1 VC2 Pi PD (Note) Topr Tstg Rating 6 6 1 100 −40 to 85 −55 to 125
2
Unit V W mW °C °C
Note:
When mounted on the glass epoxy of 2.5 cm × 1.6 t
1
2003-03-20
TG2216TU
Electrical Characteristics (VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25°C, Zg = Zl = 50 W)
Characteristics Symbol LOSS (1) Insertion loss LOSS (2) LOSS (3) ISL (1) Isolation ISL (2) ISL (3) Input power at 1dB gain compression Control current www.DataSheet4U.com Switching time Pi1dB ICON tsw Test Circuit 1 1 1 1 1 1 1 ¾ 1 Test Condition f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 2.5 GHz no RF sign...
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