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TG2216TU

Toshiba Semiconductor

GaAs Linear Integrated Circuit GaAs Monolithic

TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth ...


Toshiba Semiconductor

TG2216TU

File Download Download TG2216TU Datasheet


Description
TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1, wireless LAN and PHS Filter switching for mobile communication Features www.DataSheet4U.com · · · · · Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz = 0.7dB (typ.) @2.5 GHz High isolation: ISL = 25dB (typ.) @1.0 GHz = 23dB (typ.) @2.5 GHz High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: UF6 package (2.0 × 2.1 × 0.7 mm) Weight: 0.007g (typ.) Pin Connection and Marking (top view) VC1 6 RFcom 5 VC2 4 Equivalent Circuit VC1 6 RFcom 5 VC2 4 US 1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2 Maximum Ratings (Ta = 25°C) Characteristics Control voltage Input power Total power dissipation Operating temperature range Storage temperature range Symbol VC1 VC2 Pi PD (Note) Topr Tstg Rating 6 6 1 100 −40 to 85 −55 to 125 2 Unit V W mW °C °C Note: When mounted on the glass epoxy of 2.5 cm × 1.6 t 1 2003-03-20 TG2216TU Electrical Characteristics (VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25°C, Zg = Zl = 50 W) Characteristics Symbol LOSS (1) Insertion loss LOSS (2) LOSS (3) ISL (1) Isolation ISL (2) ISL (3) Input power at 1dB gain compression Control current www.DataSheet4U.com Switching time Pi1dB ICON tsw Test Circuit 1 1 1 1 1 1 1 ¾ 1 Test Condition f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 2.5 GHz no RF sign...




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