K4M561633G

K4M561633G - R(B)N/G/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES 3.0V & 3.3V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). www.DataSheet4U.com EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation. Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) DQM for masking. Auto refresh. 64ms refresh period (8K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free). Mobile SDRAM GENERAL DESCRIPTION The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4M561633G-R(B)N/G/L/F75 K4M561633G-R(B)N/G/L/F1H K4M561633G-R(B)N...