EFA025A-70

Excelics DATA SHEET  0LQ $OO /HDGV EFA025A-70 Low Distortion GaAs Power FET  ' 6 *    www.DataSheet4U.com NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 6 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz P1dB Vds=6V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz G1dB Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression PAE Vds=6V, Ids=50% Idss f=12GHz Noise Figure Vds=3V,Ids=15mA f=12GHz NF Associated Gain Vds=3V,Ids=15mA f=12GHz GA Saturated Drain Current Vds=3V, Vgs=0V Idss Transconductance Vds=3V, Vgs=0V Gm Pinch-off Voltage Vds=3V, Ids=1.0 mA Vp BVgd Drain Breakdown Voltage Igd=1.0mA BVgs Source Breakdown Voltage Igs=1.0mA Thermal Resistance Rth * Overall Rth depends on case mounting. MIN 17 8.5 TYP 20 20 10 7 35 1.5 10 65 40 -2 -15 -14 370* MAX UNIT dBm dB % dB dB mA mS V V V o C/W 35 30 -10 -6  All Dimensions In mils. 105 -3.5 MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 10V 6V Vds Gate-Source Voltage -6V -4V Vgs Drain Current Idss 52mA Ids Forward Gate Current 6mA 1mA Igsf Input Power 20dBm @ 3dB Compression Pin o Channel Temperat...