Document
SEMiX101GD126HDs
SEMiX® 13
Trench IGBT Modules
SEMiX101GD126HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognised file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperatur limited to TC=125°C max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
IC = 75 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
chiplevel
Tj = 25 °C Tj = 125 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
VGE=VCE, IC = 3 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 125 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V IC = 75 A VGE = ±15 V RG on = 2 RG off = 2
Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1200 129 91 75 150 -20 ... 20
10
-40 ... 150
117 81 75 150 600 -40 ... 150
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max. Unit
1.7
2.10
V
2.0
2.45
V
1
1.2
V
0.9
1.1
V
9.3
12.0 m
14.7
18.0 m
5
5.8
6.5
V
1
mA
mA
5.3
nF
0.28
nF
0.24
nF
600
nC
10.00
225
ns
40
ns
10
mJ
470
ns
85
ns
11
mJ
0.27 K/W
GD
© by SEMIKRON
Rev. 1 – 03.07.2013
1
SEMiX101GD126HDs
SEMiX® 13
Trench IGBT Modules
SEMiX101GD126HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognised file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperatur limited to TC=125°C max.
• Not for new design
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 75 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 125 °C
VF0
chiplevel
Tj = 25 °C Tj = 125 °C
rF
IRRM Qrr Err Rth(j-c)
chiplevel
Tj = 25 °C Tj = 125 °C
IF = 75 A
Tj = 125 °C
di/dtoff = 2240 A/µs VGE = -15 V
Tj = 125 °C
VCC = 600 V
Tj = 125 °C
per diode
Module
LCE RCC'+EE'
res., terminal-chip TC = 25 °C TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink (M5)
Mt
to terminals (M6)
min.
0.9 0.7 6.7 9.3
3 2.5
typ.
1.6 1.6 1 0.8 8.0 10.7 97 20 9
20 0.7 1 0.04
max. 1.80 1.8 1.1 0.9 9.3 12.0
0.46
5 5
w
Temperature Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
350
493 ± 5% 3550 ±2%
Unit
V V V V m m A µC mJ K/W
nH m m K/W Nm Nm Nm
g
K
GD 2
Rev. 1 – 03.07.2013
© by SEMIKRON
SEMiX101GD126HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 03.07.2013
3
SEMiX101GD126HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 03.07.2013
© by SEMIKRON
SEMiX101GD126HDs
SEMiX 13
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 03.07.2013
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