MS3383

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS3383 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS Features www.DataSheet4U.com GOLD METALIZATION POUT = 1.0 W MINIMUM 3.0 GHz GP = 7.0 dB INFINITE VSWR CAPABLE @ RATED CONDITIONS HERMETIC PACKAGE COMMON BASE CONFIGURATION DESCRIPTION: The MS3383 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class C applications in the 1 - 3 GHz frequency range. Gold metallization and emitter ballasting provide long term reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS VCC IC TJ T STG Parameter Power Dissipation* Collector-Supply Voltage* Device Current* Junction Temperature Storage Temperature Value 6.0 30 200 200 -65 to +200 Unit W V mA ºC ºC Thermal Data RTH(J-C) Thermal Resistance Junction-case 25 ° C/W * Applies only to rated RF amplifier operation Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS3383 www.DataSheet4U.com ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVCBO BVCER BVEBO ICBO HFE IC = 1 mA IC = 5 mA IE = 1 mA VCE = 28 V VCE = 5 V Test Conditions IE = 0 mA RBE = 10 Ω IC = 0 mA IC = 100 mA Min. 45 45 3.5 --30 Value Typ. ----------- Max. ------0.5 300 Unit V V V mA --- DYNA...