IGBT
SKM150GB12T4G
SEMITRANS® 3
Fast IGBT4 Modules
SKM150GB12T4G
Features
• IGBT4 = 4. generation fast trench IGBT (Infineon...
Description
SKM150GB12T4G
SEMITRANS® 3
Fast IGBT4 Modules
SKM150GB12T4G
Features
IGBT4 = 4. generation fast trench IGBT (Infineon)
CAL4 = Soft switching 4. generation CAL-diode
Isolated copper baseplate using DBC technology (Direct Bonded Copper)
Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to
20kHz UL recognized, file no. E63532
Typical Applications*
AC inverter drives UPS Electronic welders at fsw up to 20 kHz
Remarks
Case temperature limited to Tc = 125°C max.
Recommended Top = -40 ... +150°C Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff
IC = 150 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
Tj = 25 °C Tj = 150 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1 RG off ...
Similar Datasheet
- SKM150GB12T4 IGBT - Semikron International
- SKM150GB12T4G IGBT - Semikron International