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BD242B Dataheets PDF



Part Number BD242B
Manufacturers Bourns Electronic
Logo Bourns Electronic
Description PNP SILICON POWER TRANSISTORS
Datasheet BD242B DatasheetBD242B Datasheet (PDF)

BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. www.DataSheet4U.com MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD242 Collector-emitter voltage (RBE.

  BD242B   BD242B



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BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. www.DataSheet4U.com MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD242 Collector-emitter voltage (RBE = 100 Ω) BD242A BD242B BD242C BD242 Collector-emitter voltage (IC = -30 mA) BD242A BD242B BD242C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUCT INFORMATION 1 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD242 V(BR)CEO IC = -30 mA (see Note 5) VCE = -55 V ICES Collector-emitter cut-off current Collector cut-off VCE = -70 V VCE = -90 V VCE = -115 V current www.DataSheet4U.comEmitter cut-off IEBO current hFE V CE(sat) VBE hfe Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio ICEO VCE = -30 V VCE = -60 V VEB = VCE = VCE = IB = VCE = -5 V -4 V -4 V -0.6 A -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = IC = -1 A -3 A -3 A -3 A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 25 10 -1.2 -1.8 V V IB = 0 BD242A BD242B BD242C BD242 BD242A BD242B BD242C BD242/242A BD242B/242C MIN -45 -60 -80 -100 -0.2 -0.2 -0.2 -0.2 -0.3 -0.3 -1 mA mA mA V TYP MAX UNIT VCE = -10 V VCE = -10 V IC = -0.5 A IC = -0.5 A |hfe | NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3.125 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -1 A VBE(off) = 3.7 V IB(on) = -0.1 A RL = 20 Ω † MIN IB(off) = 0.1 A tp = 20 µs, dc ≤ 2% TYP 0.2 0.3 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 INFORMATION JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = -4 V tp = 300 µs, duty cycle < 2% TCS632AH COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V -10 TCS632AB TC = 25°C TC = 80°C hFE - DC Current Gain -1·0 www.DataSheet4U.com 100 -0·1 IC = IC = IC = IC = -100 mA -300 mA -1 A -3 A -1·0 -10 -100 -1000 10 -0·01 -0·1 -1·0 -10 -0·01 -0·1 IC - Collector Current - A IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1 VCE = -4 V TC = 25°C VBE - Base-Emitter Voltage - V -0·9 TCS632AC -0·8 -0·7 -0·6 -0·5 -0·01 -0·1 -1 -10 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS632AD IC - Collector Current - A -10 tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation www.DataSheet4U.com -1·0 -0·1 BD242 BD242A BD242B BD242C -10 -100 -1000 -0·01 -1·0 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 50 Ptot - Maximum Pow.


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